FQI12N60TU
Manufacturer Product Number:

FQI12N60TU

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

FQI12N60TU-DG

Description:

MOSFET N-CH 600V 10.5A I2PAK
Detailed Description:
N-Channel 600 V 10.5A (Tc) 3.13W (Ta), 180W (Tc) Through Hole TO-262 (I2PAK)

Inventory:

12836483
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FQI12N60TU Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
QFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
700mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 180W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FQI1

Datasheet & Documents

Datasheets

Additional Information

Standard Package
1,000

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
AOW11N60
MANUFACTURER
Alpha & Omega Semiconductor Inc.
QUANTITY AVAILABLE
773
DiGi PART NUMBER
AOW11N60-DG
UNIT PRICE
0.82
SUBSTITUTE TYPE
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