Manufacturer Product Number:
FQE10N20CTU
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
FQE10N20CTU-DG
Description:
MOSFET N-CH 200V 4A TO126-3
Detailed Description:
N-Channel 200 V 4A (Tc) 12.8W (Tc) Through Hole TO-126-3
Inventory:
12848531
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FQE10N20CTU Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
QFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
510 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
12.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-126-3
Package / Case
TO-225AA, TO-126-3
Base Product Number
FQE1
Datasheet & Documents
Datasheets
Additional Information
Standard Package
1,920
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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