Manufacturer Product Number:
FCPF165N65S3L1
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
FCPF165N65S3L1-DG
Description:
MOSFET N-CH 650V 19A TO220F-3
Detailed Description:
N-Channel 650 V 19A (Tc) 35W (Tc) Through Hole TO-220F-3
Inventory:
12838124
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FCPF165N65S3L1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
SuperFET® III
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1415 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
-55°C ~ 150°C
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Base Product Number
FCPF165
Datasheet & Documents
Datasheets
Additional Information
Other Names
2832-FCPF165N65S3L1
2156-FCPF165N65S3L1-OS
ONSONSFCPF165N65S3L1
Standard Package
50
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
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