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Manufacturer Product Number:
FCA36N60NF
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
FCA36N60NF-DG
Description:
MOSFET N-CH 600V 34.9A TO3PN
Detailed Description:
N-Channel 600 V 34.9A (Tc) 312W (Tc) Through Hole TO-3PN
Inventory:
RFQ Online
12850149
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FCA36N60NF Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
FRFET®, SupreMOS®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
34.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
95mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
112 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4245 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
312W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PN
Package / Case
TO-3P-3, SC-65-3
Base Product Number
FCA36N60
Datasheet & Documents
Datasheets
FCA36N60NF
Additional Information
Other Names
488-FCA36N60NF
Standard Package
450
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
TK31J60W,S1VQ
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
25
DiGi PART NUMBER
TK31J60W,S1VQ-DG
UNIT PRICE
4.32
SUBSTITUTE TYPE
Similar
PART NUMBER
TK31J60W5,S1VQ
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
25
DiGi PART NUMBER
TK31J60W5,S1VQ-DG
UNIT PRICE
4.54
SUBSTITUTE TYPE
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