BS108G
Manufacturer Product Number:

BS108G

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

BS108G-DG

Description:

MOSFET N-CH 200V 250MA TO92-3
Detailed Description:
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)

Inventory:

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BS108G Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2V, 2.8V
Rds On (Max) @ Id, Vgs
8Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id
1.5V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
350mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92 (TO-226)
Package / Case
TO-226-3, TO-92-3 Long Body
Base Product Number
BS108

Datasheet & Documents

Datasheets
BS108G

Additional Information

Standard Package
1,000

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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