Manufacturer Product Number:
PHB21N06LT,118
Product Overview
Manufacturer:
NXP USA Inc.
DiGi Electronics Part Number:
PHB21N06LT,118-DG
Description:
NOW NEXPERIA PHB21N06LT - 19A, 5
Detailed Description:
N-Channel 55 V 19A (Tc) 56W (Tc) Surface Mount D2PAK
Inventory:
978 Pcs New Original In Stock
12947330
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
PHB21N06LT,118 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
NXP Semiconductors
Packaging
Bulk
Series
TrenchMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
70mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
9.4 nC @ 5 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
56W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-PHB21N06LT,118
NEXNXPPHB21N06LT,118
Standard Package
739
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
DIGI Certification
Related Products
IRF6662TRPBF
IRF6662 - 12V-300V N-CHANNEL POW
PH1030DLSX
POWER MOS
FDPF8N50NZU
POWER FIELD-EFFECT TRANSISTOR, 6
