Manufacturer Product Number:
BUK9E4R4-80E,127
Product Overview
Manufacturer:
NXP USA Inc.
DiGi Electronics Part Number:
BUK9E4R4-80E,127-DG
Description:
MOSFET N-CH 80V 120A I2PAK
Detailed Description:
N-Channel 80 V 120A (Tc) 349W (Tc) Through Hole I2PAK
Inventory:
12809370
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BUK9E4R4-80E,127 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
NXP Semiconductors
Packaging
-
Series
TrenchMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
123 nC @ 5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
17130 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
349W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
BUK9
Additional Information
Other Names
2156-BUK9E4R4-80E127-NX
NEXNXPBUK9E4R4-80E,127
568-9875-5
934066515127
BUK9E4R480E127
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
FDI045N10A-F102
MANUFACTURER
onsemi
QUANTITY AVAILABLE
475
DiGi PART NUMBER
FDI045N10A-F102-DG
UNIT PRICE
1.84
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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