Manufacturer Product Number:
BUK751R8-40E127
Product Overview
Manufacturer:
NXP USA Inc.
DiGi Electronics Part Number:
BUK751R8-40E127-DG
Description:
N-CHANNEL POWER MOSFET
Detailed Description:
N-Channel 40 V 120A (Tc) 349W (Tc) Through Hole TO-220AB
Inventory:
12931490
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
BUK751R8-40E127 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
NXP Semiconductors
Packaging
Bulk
Series
TrenchMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
145 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
11340 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
349W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-BUK751R8-40E127
NEXNXPBUK751R8-40E127
Standard Package
314
Environmental & Export Classification
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
IRF244
N-CHANNEL POWER MOSFET
3LN01CPA-TB-E
NCH 1.5V DRIVE SERIES
3LN03M-TL-E
N-CHANNEL SILICON MOSFET
