Manufacturer Product Number:
BUK652R7-30C,127
Product Overview
Manufacturer:
NXP USA Inc.
DiGi Electronics Part Number:
BUK652R7-30C,127-DG
Description:
MOSFET N-CH 30V 100A TO220AB
Detailed Description:
N-Channel 30 V 100A (Tc) 204W (Tc) Through Hole TO-220AB
Inventory:
12867376
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BUK652R7-30C,127 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
NXP Semiconductors
Packaging
-
Series
TrenchMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
114 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
6960 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
204W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
BUK65
Datasheet & Documents
Datasheets
Additional Information
Other Names
954-BUK652R7-30C127
NEXNXPBUK652R7-30C,127
568-7494-5
934064251127
BUK652R7-30C,127-DG
BUK652R730C127
2156-BUK652R7-30C127-NX
Standard Package
50
Environmental & Export Classification
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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