Manufacturer Product Number:
PEMB1,115
Product Overview
Manufacturer:
Nexperia USA Inc.
DiGi Electronics Part Number:
PEMB1,115-DG
Description:
TRANS PREBIAS 2PNP 50V SOT666
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666
Inventory:
12831145
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PEMB1,115 Technical Specifications
Category
Bipolar (BJT), Bipolar Transistor Arrays, Pre-Biased
Manufacturer
Nexperia
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
22kOhms
Resistor - Emitter Base (R2)
22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
1µA
Frequency - Transition
-
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SOT-666
Base Product Number
PEMB1
Datasheet & Documents
Datasheets
Additional Information
Other Names
PEMB1 T/R-DG
PEMB1 T/R
2156-PEMB1,115-1727
934056869115
Standard Package
4,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Alternative Models
PART NUMBER
RN2903FE(TE85L,F)
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
3450
DiGi PART NUMBER
RN2903FE(TE85L,F)-DG
UNIT PRICE
0.04
SUBSTITUTE TYPE
Similar
PART NUMBER
RN2908FE(TE85L,F)
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
7
DiGi PART NUMBER
RN2908FE(TE85L,F)-DG
UNIT PRICE
0.04
SUBSTITUTE TYPE
Similar
DIGI Certification
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