Manufacturer Product Number:
GAN190-650FBEZ
Product Overview
Manufacturer:
Nexperia USA Inc.
DiGi Electronics Part Number:
GAN190-650FBEZ-DG
Description:
650 V, 190 MOHM GALLIUM NITRIDE
Detailed Description:
N-Channel 650 V 11.5A (Ta) 125W (Ta) Surface Mount, Wettable Flank DFN5060-5
Inventory:
2013 Pcs New Original In Stock
13005833
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GAN190-650FBEZ Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Nexperia
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V
Rds On (Max) @ Id, Vgs
190mOhm @ 3.9A, 6V
Vgs(th) (Max) @ Id
2.5V @ 12.2mA
Gate Charge (Qg) (Max) @ Vgs
2.8 nC @ 6 V
Vgs (Max)
+7V, -1.4V
Input Capacitance (Ciss) (Max) @ Vds
96 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
125W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount, Wettable Flank
Supplier Device Package
DFN5060-5
Package / Case
8-PowerVDFN
Base Product Number
GAN190
Datasheet & Documents
Datasheets
Additional Information
Other Names
1727-GAN190-650FBEZCT
1727-GAN190-650FBEZTR
5202-GAN190-650FBEZTR
934665905332
1727-GAN190-650FBEZDKR
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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