GAN140-650EBEZ
Manufacturer Product Number:

GAN140-650EBEZ

Product Overview

Manufacturer:

Nexperia USA Inc.

DiGi Electronics Part Number:

GAN140-650EBEZ-DG

Description:

650 V, 140 MOHM GALLIUM NITRIDE
Detailed Description:
N-Channel 650 V 17A (Ta) 113W (Ta) Surface Mount, Wettable Flank DFN8080-8

Inventory:

2461 Pcs New Original In Stock
13005803
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

GAN140-650EBEZ Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Nexperia
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V
Rds On (Max) @ Id, Vgs
140mOhm @ 5A, 6V
Vgs(th) (Max) @ Id
2.5V @ 17.2mA
Gate Charge (Qg) (Max) @ Vgs
3.5 nC @ 6 V
Vgs (Max)
+7V, -1.4V
Input Capacitance (Ciss) (Max) @ Vds
125 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
113W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount, Wettable Flank
Supplier Device Package
DFN8080-8
Package / Case
8-VDFN Exposed Pad
Base Product Number
GAN140

Datasheet & Documents

Datasheets

Additional Information

Other Names
1727-GAN140-650EBEZCT
1727-GAN140-650EBEZDKR
934665902332
5202-GAN140-650EBEZTR
1727-GAN140-650EBEZTR
Standard Package
2,500

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
toshiba-semiconductor-and-storage

XPJR6604PB,LXHQ

40V; UMOS9; 0.66MOHM; S-TOGL

panjit

PJQ4548VP-AU_R2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

panjit

PJQ5542-AU_R2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

wolfspeed

E3M0045065K

SIC, MOSFET, 45M, 650V, TO-247-4