Manufacturer Product Number:
GAN039-650NTBZ
Product Overview
Manufacturer:
Nexperia USA Inc.
DiGi Electronics Part Number:
GAN039-650NTBZ-DG
Description:
650 V, 33 MOHM GALLIUM NITRIDE (
Detailed Description:
N-Channel 650 V 58.5A (Ta) 250W (Ta) Surface Mount CCPAK1212i
Inventory:
13259569
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GAN039-650NTBZ Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Nexperia
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
58.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
39mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
4.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1980 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
250W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
CCPAK1212i
Package / Case
12-BESOP (0.370", 9.40mm Width), Exposed Pad
Additional Information
Other Names
1727-GAN039-650NTBZTR
1727-GAN039-650NTBZCT
1727-GAN039-650NTBZDKR
934662153139
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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