JAN2N3811L
Manufacturer Product Number:

JAN2N3811L

Product Overview

Manufacturer:

Microsemi Corporation

DiGi Electronics Part Number:

JAN2N3811L-DG

Description:

TRANS 2PNP 60V 0.05A TO78
Detailed Description:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6

Inventory:

12924401
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JAN2N3811L Technical Specifications

Category
Bipolar (BJT), Bipolar Transistor Arrays
Manufacturer
Microsemi
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
2 PNP (Dual)
Current - Collector (Ic) (Max)
50mA
Voltage - Collector Emitter Breakdown (Max)
60V
Vce Saturation (Max) @ Ib, Ic
250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 1mA, 5V
Power - Max
350mW
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/336
Mounting Type
Through Hole
Package / Case
TO-78-6 Metal Can
Supplier Device Package
TO-78-6
Base Product Number
2N3811

Datasheet & Documents

Additional Information

Other Names
150-JAN2N3811L
1086-2360-MIL
1086-2360-DG
1086-2360
Standard Package
1

Environmental & Export Classification

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
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