2N5011
Manufacturer Product Number:

2N5011

Product Overview

Manufacturer:

Microsemi Corporation

DiGi Electronics Part Number:

2N5011-DG

Description:

NPN SILICON TRANSISTOR
Detailed Description:
Bipolar (BJT) Transistor NPN 600 V 200 mA 1 W Through Hole TO-5AA

Inventory:

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13251752
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2N5011 Technical Specifications

Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
Microsemi
Packaging
Bulk
Series
-
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
200 mA
Voltage - Collector Emitter Breakdown (Max)
600 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 5mA, 25mA
Current - Collector Cutoff (Max)
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 25mA, 10V
Power - Max
1 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Supplier Device Package
TO-5AA

Datasheet & Documents

Datasheets
2N5010(S) - 2N5015(S)

Additional Information

Other Names
150-2N5011
2N5011-ND
Standard Package
1

Environmental & Export Classification

RoHS Status
RoHS non-compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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