Manufacturer Product Number:
MSCSM120HRM08NG
Product Overview
Manufacturer:
Microchip Technology
DiGi Electronics Part Number:
MSCSM120HRM08NG-DG
Description:
SIC 4N-CH 1200V/700V 317A
Detailed Description:
Mosfet Array 1200V (1.2kV), 700V 317A (Tc), 227A (Tc) 1.253kW (Tc), 613W (Tc) Chassis Mount
Inventory:
12960737
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MSCSM120HRM08NG Technical Specifications
Category
FETs, MOSFETs, FET, MOSFET Arrays
Manufacturer
Microchip Technology
Packaging
Bulk
Series
-
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
4 N-Channel (Three Level Inverter)
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV), 700V
Current - Continuous Drain (Id) @ 25°C
317A (Tc), 227A (Tc)
Rds On (Max) @ Id, Vgs
7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V
Vgs(th) (Max) @ Id
2.8V @ 12mA, 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
928nC @ 20V, 430nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
12100pF @ 1000V, 9000pF @ 700V
Power - Max
1.253kW (Tc), 613W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
-
Datasheet & Documents
Datasheets
Additional Information
Other Names
150-MSCSM120HRM08NG
Standard Package
1
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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