Manufacturer Product Number:
IXTQ48N65X2M
Product Overview
Manufacturer:
IXYS
DiGi Electronics Part Number:
IXTQ48N65X2M-DG
Description:
DISCRETE MOSFET 48A 650V X2 TO3P
Detailed Description:
N-Channel 650 V 48A (Tc) 70W (Tc) Through Hole TO-3P
Inventory:
12966522
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IXTQ48N65X2M Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Littelfuse
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
65mOhm @ 24A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
76 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
70W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Additional Information
Other Names
238-IXTQ48N65X2M
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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