Manufacturer Product Number:
IXTP3N120
Product Overview
Manufacturer:
IXYS
DiGi Electronics Part Number:
IXTP3N120-DG
Description:
MOSFET N-CH 1200V 3A TO220AB
Detailed Description:
N-Channel 1200 V 3A (Tc) 200W (Tc) Through Hole TO-220-3
Inventory:
12822972
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IXTP3N120 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Littelfuse
Packaging
Tube
Series
HiPerFET™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
IXTP3
Datasheet & Documents
Datasheets
Additional Information
Other Names
IXTP3N120-NDR
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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