Manufacturer Product Number:
IXTF6N200P3
Product Overview
Manufacturer:
IXYS
DiGi Electronics Part Number:
IXTF6N200P3-DG
Description:
MOSFET N-CH 2000V 4A I4PAC
Detailed Description:
N-Channel 2000 V 4A (Tc) 215W (Tc) Through Hole ISOPLUS i4-PAC™
Inventory:
12821834
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IXTF6N200P3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Littelfuse
Packaging
Tube
Series
Polar P3™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
2000 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
143 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
215W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ISOPLUS i4-PAC™
Package / Case
ISOPLUSi5-PAK™
Base Product Number
IXTF6
Datasheet & Documents
Datasheets
Additional Information
Standard Package
25
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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