Manufacturer Product Number:
IXFH80N65X2
Product Overview
Manufacturer:
IXYS
DiGi Electronics Part Number:
IXFH80N65X2-DG
Description:
MOSFET N-CH 650V 80A TO247
Detailed Description:
N-Channel 650 V 80A (Tc) 890W (Tc) Through Hole TO-247 (IXTH)
Inventory:
12821231
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IXFH80N65X2 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Littelfuse
Packaging
Tube
Series
HiPerFET™, Ultra X2
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
143 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
8245 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
890W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXTH)
Package / Case
TO-247-3
Base Product Number
IXFH80
Datasheet & Documents
Datasheets
Additional Information
Other Names
IXFH80N65X2XINACTIVE
IXFH80N65X2X-DG
632463
IXFH80N65X2X
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
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