Manufacturer Product Number:
IRFB4110PBFXKMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IRFB4110PBFXKMA1-DG
Description:
TRENCH >=100V
Detailed Description:
N-Channel 100 V 120A (Tc) 370W (Tc) Through Hole TO-220AB
Inventory:
13269135
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IRFB4110PBFXKMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
210 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9620 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
370W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Additional Information
Other Names
SP005732686
448-IRFB4110PBFXKMA1
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
DIGI Certification
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