IRF9Z34NLPBF
Manufacturer Product Number:

IRF9Z34NLPBF

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IRF9Z34NLPBF-DG

Description:

MOSFET P-CH 55V 19A TO262
Detailed Description:
P-Channel 55 V 19A (Tc) 3.8W (Ta), 68W (Tc) Through Hole TO-262

Inventory:

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12805099
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IRF9Z34NLPBF Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
HEXFET®
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
100mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
620 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 68W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet & Documents

Datasheets
IRF9Z34NLPBF

Additional Information

Other Names
SP001570616
*IRF9Z34NLPBF
Standard Package
50

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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