Manufacturer Product Number:
IRF640NLPBF
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IRF640NLPBF-DG
Description:
MOSFET N-CH 200V 18A TO262
Detailed Description:
N-Channel 200 V 18A (Tc) 150W (Tc) Through Hole TO-262
Inventory:
794 Pcs New Original In Stock
12804873
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IRF640NLPBF Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
HEXFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
67 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1160 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRF640
Datasheet & Documents
Datasheets
Additional Information
Other Names
*IRF640NLPBF
SP001563296
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
FQI27N25TU
MANUFACTURER
Fairchild Semiconductor
QUANTITY AVAILABLE
600
DiGi PART NUMBER
FQI27N25TU-DG
UNIT PRICE
1.48
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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