IRF5210LPBF
Manufacturer Product Number:

IRF5210LPBF

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IRF5210LPBF-DG

Description:

MOSFET P-CH 100V 38A TO262
Detailed Description:
P-Channel 100 V 38A (Tc) 3.1W (Ta), 170W (Tc) Through Hole TO-262

Inventory:

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12804663
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IRF5210LPBF Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
HEXFET®
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2780 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 170W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRF5210

Datasheet & Documents

Datasheets
IRF5210LPBF

Additional Information

Other Names
2156-IRF5210LPBF
SP001564364
Standard Package
1,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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