Manufacturer Product Number:
IPZA65R018CFD7XKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPZA65R018CFD7XKSA1-DG
Description:
HIGH POWER_NEW
Detailed Description:
N-Channel 650 V 106A (Tc) 446W (Tc) Through Hole PG-TO247-4-3
Inventory:
12986515
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IPZA65R018CFD7XKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolMOS™ CFD7
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
106A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
18mOhm @ 58.2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 2.91mA
Gate Charge (Qg) (Max) @ Vgs
234 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
11660 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
446W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-3
Package / Case
TO-247-4
Base Product Number
IPZA65R
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP005413354
448-IPZA65R018CFD7XKSA1
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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