Manufacturer Product Number:
IPZ65R095C7
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPZ65R095C7-DG
Description:
IPZ65R095 - 650V AND 700V COOLMO
Detailed Description:
N-Channel 650 V 24A (Tc) 128W (Tc) Through Hole PG-TO247-4-1
Inventory:
12946860
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IPZ65R095C7 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id
4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2140 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
128W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-1
Package / Case
TO-247-4
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-IPZ65R095C7
INFINFIPZ65R095C7
Standard Package
73
Environmental & Export Classification
ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
Related Products
FDPF5N50UT
POWER FIELD-EFFECT TRANSISTOR, 4
IRFZ44ZLPBF
IRFZ44 - 12V-300V N-CHANNEL POWE
FQU9N25TU
POWER FIELD-EFFECT TRANSISTOR, 7
