Manufacturer Product Number:
IPW65R110CFDAFKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPW65R110CFDAFKSA1-DG
Description:
MOSFET N-CH 650V 31.2A TO247-3
Detailed Description:
N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO247-3
Inventory:
240 Pcs New Original In Stock
12803476
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IPW65R110CFDAFKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs
118 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3240 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
277.8W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
Base Product Number
IPW65R110
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPW65R110CFDAFKSA1-DG
2156-IPW65R110CFDAFKSA1
SP000895236
448-IPW65R110CFDAFKSA1
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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