Manufacturer Product Number:
IPU95R3K7P7AKMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPU95R3K7P7AKMA1-DG
Description:
MOSFET N-CH 950V 2A TO251-3
Detailed Description:
N-Channel 950 V 2A (Tc) 22W (Tc) Through Hole PG-TO251-3
Inventory:
527 Pcs New Original In Stock
12803175
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IPU95R3K7P7AKMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolMOS™ P7
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
950 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.7Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
196 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
22W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IPU95R3
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-IPU95R3K7P7AKMA1
SP001792320
IFEINFIPU95R3K7P7AKMA1
Standard Package
75
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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