Manufacturer Product Number:
IPU60R1K5CEAKMA2
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPU60R1K5CEAKMA2-DG
Description:
MOSFET N-CH 600V 3.1A TO251-3
Detailed Description:
N-Channel 600 V 3.1A (Tc) 49W (Tc) Through Hole PG-TO251-3
Inventory:
924 Pcs New Original In Stock
13064255
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IPU60R1K5CEAKMA2 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolMOS™ CE
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
9.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
49W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IPU60R1
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP001396898
2156-IPU60R1K5CEAKMA2
ROCINFIPU60R1K5CEAKMA2
Standard Package
75
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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