IPS70R1K4P7SAKMA1
Manufacturer Product Number:

IPS70R1K4P7SAKMA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IPS70R1K4P7SAKMA1-DG

Description:

MOSFET N-CH 700V 4A TO251-3
Detailed Description:
N-Channel 700 V 4A (Tc) 22.7W (Tc) Through Hole PG-TO251-3

Inventory:

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12809857
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IPS70R1K4P7SAKMA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolMOS™ P7
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
700 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs
4.7 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
158 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
22.7W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IPS70R1

Datasheet & Documents

Datasheets
IPS70R1K4P7SAKMA1

Additional Information

Other Names
IPS70R1K4P7SAKMA1-DG
SP001499706
448-IPS70R1K4P7SAKMA1
Standard Package
75

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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