Manufacturer Product Number:
IPP65R099CFD7AAKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPP65R099CFD7AAKSA1-DG
Description:
MOSFET N-CH 650V 24A TO220-3
Detailed Description:
N-Channel 650 V 24A (Tc) 127W (Tc) Through Hole PG-TO220-3
Inventory:
38 Pcs New Original In Stock
12945189
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IPP65R099CFD7AAKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
*
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
99mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2513 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
127W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
IPP65R099
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-IPP65R099CFD7AAKSA1
448-IPP65R099CFD7AAKSA1
SP005324316
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPW65R099CFD7AXKSA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
194
DiGi PART NUMBER
IPW65R099CFD7AXKSA1-DG
UNIT PRICE
3.46
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
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