IPP65R041CFD7XKSA1
Manufacturer Product Number:

IPP65R041CFD7XKSA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IPP65R041CFD7XKSA1-DG

Description:

650V FET COOLMOS TO247
Detailed Description:
N-Channel 650 V 50A (Tc) 227W (Tc) Through Hole PG-TO220-3-1

Inventory:

500 Pcs New Original In Stock
12945764
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IPP65R041CFD7XKSA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolMOS™ CFD7
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
41mOhm @ 24.8A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs
102 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4975 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Base Product Number
IPP65R041

Datasheet & Documents

Datasheets
IPP65R041CFD7XKSA1

Additional Information

Other Names
2156-IPP65R041CFD7XKSA1
448-IPP65R041CFD7XKSA1
SP005413358
Standard Package
50

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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