Manufacturer Product Number:
IPP048N12N3GXKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPP048N12N3GXKSA1-DG
Description:
MOSFET N-CH 120V 100A TO220-3
Detailed Description:
N-Channel 120 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
Inventory:
1395 Pcs New Original In Stock
12801133
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IPP048N12N3GXKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
OptiMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs
182 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12000 pF @ 60 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Base Product Number
IPP048
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP000652734
IPP048N12N3 G-DG
IPP048N12N3G
INFINFIPP048N12N3GXKSA1
IPP048N12N3 G
2156-IPP048N12N3GXKSA1
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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