Manufacturer Product Number:
IPP018N10N5XKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPP018N10N5XKSA1-DG
Description:
TRENCH >=100V
Detailed Description:
N-Channel 100 V 205A (Tc) 3.8W (Ta), 375W (Tc) Through Hole PG-TO220-3
Inventory:
170 Pcs New Original In Stock
13002350
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IPP018N10N5XKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
OptiMOS™ 5
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
205A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.83mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.8V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
210 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
16000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 375W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP005736885
448-IPP018N10N5XKSA1
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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