Manufacturer Product Number:
IPN65R1K5CEATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPN65R1K5CEATMA1-DG
Description:
MOSFET N-CH 650V 5.2A SOT223
Detailed Description:
N-Channel 650 V 5.2A (Tc) 5W (Tc) Surface Mount PG-SOT223
Inventory:
13064052
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IPN65R1K5CEATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolMOS™ CE
Packaging
Tape & Reel (TR)
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
225 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
5W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223
Package / Case
TO-261-4, TO-261AA
Base Product Number
IPN65R1
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPN65R1K5CEATMA1DKR
IPN65R1K5CEATMA1TR
IPN65R1K5CEATMA1CT
2156-IPN65R1K5CEATMA1TR
SP001461234
IPN65R1K5CEATMA1-ND
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPN70R1K4P7SATMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
7808
DiGi PART NUMBER
IPN70R1K4P7SATMA1-DG
UNIT PRICE
0.17
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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