Manufacturer Product Number:
IPN60R3K4CEATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPN60R3K4CEATMA1-DG
Description:
MOSFET N-CH 600V 2.6A SOT223
Detailed Description:
N-Channel 600 V 2.6A (Tc) 5W (Tc) Surface Mount PG-SOT223-3
Inventory:
2502 Pcs New Original In Stock
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IPN60R3K4CEATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolMOS™ CE
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
93 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
5W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-3
Package / Case
TO-261-4, TO-261AA
Base Product Number
IPN60R3
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPN60R3K4CEATMA1DKR
IPN60R3K4CEATMA1CT
IPN60R3K4CEATMA1TR
SP001434888
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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