Manufacturer Product Number:
IPL65R660E6AUMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPL65R660E6AUMA1-DG
Description:
MOSFET N-CH 650V 7A THIN-PAK
Detailed Description:
N-Channel 650 V 7A (Tc) 63W (Tc) Surface Mount PG-VSON-4
Inventory:
12801359
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IPL65R660E6AUMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolMOS™ E6
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
660mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
63W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-VSON-4
Package / Case
4-PowerTSFN
Base Product Number
IPL65R
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP000895212
Standard Package
3,000
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
2A (4 Weeks)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPL60R185P7AUMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
5980
DiGi PART NUMBER
IPL60R185P7AUMA1-DG
UNIT PRICE
1.15
SUBSTITUTE TYPE
Direct
DIGI Certification
Related Products
IPB107N20NAATMA1
MOSFET N-CH 200V 88A D2PAK
BSS119NH6327XTSA1
MOSFET N-CH 100V 190MA SOT23-3
IPP04CN10NG
MOSFET N-CH 100V 100A TO220-3