Manufacturer Product Number:
IPI60R250CPAKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPI60R250CPAKSA1-DG
Description:
MOSFET N-CH 650V 12A TO262-3
Detailed Description:
N-Channel 650 V 12A (Tc) 104W (Tc) Through Hole PG-TO262-3
Inventory:
12805934
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IPI60R250CPAKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
250mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI60R
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPI60R250CP-DG
SP000358141
IPI60R250CP
Standard Package
500
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
STP18N60M2
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
470
DiGi PART NUMBER
STP18N60M2-DG
UNIT PRICE
0.87
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
STI18N65M2
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
229
DiGi PART NUMBER
STI18N65M2-DG
UNIT PRICE
1.05
SUBSTITUTE TYPE
Direct
DIGI Certification
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