Manufacturer Product Number:
IPI60R165CPXKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPI60R165CPXKSA1-DG
Description:
HIGH POWER_LEGACY
Detailed Description:
N-Channel 600 V 21A (Tc) 192W (Tc) Through Hole PG-TO262-3-1
Inventory:
500 Pcs New Original In Stock
12803446
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IPI60R165CPXKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolMOS®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
3.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
192W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI60R165
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPI60R165CPXKSA1-DG
448-IPI60R165CPXKSA1
SP000680744
Standard Package
500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
IPP90R500C3XKSA1
MOSFET N-CH 900V 11A TO220-3
IPB80N08S207ATMA1
MOSFET N-CH 75V 80A TO263-3
IPS65R1K5CEAKMA1
MOSFET N-CH 650V 3.1A TO251