Manufacturer Product Number:
IPI06N03LA
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPI06N03LA-DG
Description:
MOSFET N-CH 25V 50A TO262-3
Detailed Description:
N-Channel 25 V 50A (Tc) 83W (Tc) Through Hole PG-TO262-3
Inventory:
12800468
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IPI06N03LA Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
OptiMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2653 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI06N
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP000014026
IPI06N03LAX
Standard Package
500
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
IPB60R380P6ATMA1
MOSFET N-CH 600V 10.6A D2PAK
IPD50N08S413ATMA1
MOSFET N-CH 80V 50A TO252-3
IPD50R399CP
MOSFET N-CH 500V 9A TO252-3