Manufacturer Product Number:
IPI045N10N3GXK
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPI045N10N3GXK-DG
Description:
MOSFET N-CH 100V 137A TO262-3
Detailed Description:
N-Channel 100 V 137A (Tc) 214W (Tc) Through Hole PG-TO262-3
Inventory:
12800266
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IPI045N10N3GXK Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
OptiMOS™ 3
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
137A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
117 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8410 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI045N
Additional Information
Other Names
SP000482424
Standard Package
1,000
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
IPD50R280CEATMA1
MOSFET N-CH 500V 13A TO252-3
IPB70N10SL16ATMA1
MOSFET N-CH 100V 70A TO263-3
IPB45N06S4L08ATMA1
MOSFET N-CH 60V 45A TO263-3
