Manufacturer Product Number:
IPD65R650CEATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPD65R650CEATMA1-DG
Description:
MOSFET N-CH 650V 10.1A TO252-3
Detailed Description:
N-Channel 650 V 10.1A (Tc) 86W (Tc) Surface Mount PG-TO252-3
Inventory:
12805721
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IPD65R650CEATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
10.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
86W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD65R
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP001295798
Standard Package
2,500
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
TK7P65W,RQ
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
1403
DiGi PART NUMBER
TK7P65W,RQ-DG
UNIT PRICE
0.61
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
IXTY4N65X2
MANUFACTURER
IXYS
QUANTITY AVAILABLE
70
DiGi PART NUMBER
IXTY4N65X2-DG
UNIT PRICE
1.07
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
IPD65R650CEAUMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
2270
DiGi PART NUMBER
IPD65R650CEAUMA1-DG
UNIT PRICE
0.33
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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