Manufacturer Product Number:
IPD65R190C7ATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPD65R190C7ATMA1-DG
Description:
MOSFET N-CH 650V 13A TO252-3
Detailed Description:
N-Channel 650 V 13A (Tc) 72W (Tc) Surface Mount PG-TO252-3
Inventory:
3671 Pcs New Original In Stock
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IPD65R190C7ATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolMOS™ C7
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id
4V @ 290µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
72W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD65R
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPD65R190C7ATMA1DKR
IPD65R190C7ATMA1TR
SP000928648
IPD65R190C7ATMA1CT
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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