Manufacturer Product Number:
IPD60R800CEATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPD60R800CEATMA1-DG
Description:
MOSFET N-CH 600V 5.6A TO252-3
Detailed Description:
N-Channel 600 V 5.6A (Tc) 48W (Tc) Surface Mount PG-TO252-3
Inventory:
12804740
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IPD60R800CEATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolMOS™ CE
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
800mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs
17.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
373 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD60R
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPD60R800CEATMA1TR
INFINFIPD60R800CEATMA1
SP001276028
IPD60R800CEATMA1CT
2156-IPD60R800CEATMA1-ITTR-DG
2156-IPD60R800CEATMA1
IPD60R800CEATMA1DKR
Standard Package
2,500
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPD60R800CEAUMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
2503
DiGi PART NUMBER
IPD60R800CEAUMA1-DG
UNIT PRICE
0.27
SUBSTITUTE TYPE
Direct
PART NUMBER
TK7P60W5,RVQ
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
1423
DiGi PART NUMBER
TK7P60W5,RVQ-DG
UNIT PRICE
0.59
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
IXTY4N65X2
MANUFACTURER
IXYS
QUANTITY AVAILABLE
70
DiGi PART NUMBER
IXTY4N65X2-DG
UNIT PRICE
1.07
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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