Manufacturer Product Number:
IPD60R360P7ATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPD60R360P7ATMA1-DG
Description:
MOSFET N-CH 600V 9A TO252-3
Detailed Description:
N-Channel 600 V 9A (Tc) 41W (Tc) Surface Mount PG-TO252-3
Inventory:
7000 Pcs New Original In Stock
12800936
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IPD60R360P7ATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolMOS™ P7
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id
4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
555 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
41W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD60R
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-IPD60R360P7ATMA1
SP001606048
IPD60R360P7ATMA1CT
IPD60R360P7ATMA1DKR
IPD60R360P7ATMA1TR
IFEINFIPD60R360P7ATMA1
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
IPD025N06NATMA1
MOSFET N-CH 60V 90A TO252-3
IPB055N03LGATMA1
MOSFET N-CH 30V 50A D2PAK
IPB65R125C7ATMA1
MOSFET N-CH 650V 18A D2PAK
