Manufacturer Product Number:
IPD60N10S412ATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPD60N10S412ATMA1-DG
Description:
MOSFET N-CH 100V 60A TO252-3
Detailed Description:
N-Channel 100 V 60A (Tc) 94W (Tc) Surface Mount PG-TO252-3-313
Inventory:
5842 Pcs New Original In Stock
12804190
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IPD60N10S412ATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2470 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
94W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-313
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD60N10
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPD60N10S412ATMA1-DG
448-IPD60N10S412ATMA1DKR
448-IPD60N10S412ATMA1CT
448-IPD60N10S412ATMA1TR
INFINFIPD60N10S412ATMA1
SP001102936
2156-IPD60N10S412ATMA1
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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