IPD30N06S2L13ATMA4
Manufacturer Product Number:

IPD30N06S2L13ATMA4

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IPD30N06S2L13ATMA4-DG

Description:

MOSFET N-CH 55V 30A TO252-31
Detailed Description:
N-Channel 55 V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11

Inventory:

19615 Pcs New Original In Stock
12800492
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IPD30N06S2L13ATMA4 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
136W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD30N06

Datasheet & Documents

Additional Information

Other Names
IPD30N06S2L13ATMA4TR
SP001061280
2156-IPD30N06S2L13ATMA4
IPD30N06S2L13ATMA4DKR
INFINFIPD30N06S2L13ATMA4
IPD30N06S2L13ATMA4-DG
IPD30N06S2L13ATMA4CT
Standard Package
2,500

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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