Manufacturer Product Number:
IPD088N06N3GATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPD088N06N3GATMA1-DG
Description:
MOSFET N-CH 60V 50A TO252-3
Detailed Description:
N-Channel 60 V 50A (Tc) 71W (Tc) Surface Mount PG-TO252-3-311
Inventory:
12966854
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IPD088N06N3GATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 34µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3900 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
71W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-311
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD088N
Datasheet & Documents
Datasheets
Additional Information
Other Names
448-IPD088N06N3GATMA1TR
SP005559926
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
IPD048N06L3GATMA1
MOSFET N-CH 60V 90A TO252-3
IPD220N06L3GATMA1
MOSFET N-CH 60V 30A TO252-3
IPD079N06L3GATMA1
MOSFET N-CH 60V 50A TO252-3
