IPC26N12NX1SA1
Manufacturer Product Number:

IPC26N12NX1SA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IPC26N12NX1SA1-DG

Description:

MOSFET N-CH 120V 1A SAWN ON FOIL
Detailed Description:
N-Channel 120 V 1A (Tj) Surface Mount Sawn on foil

Inventory:

12804936
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IPC26N12NX1SA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Bulk
Series
OptiMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
1A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 244µA
Vgs (Max)
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
Sawn on foil
Package / Case
Die
Base Product Number
IPC26N

Datasheet & Documents

Datasheets

Additional Information

Other Names
448-IPC26N12NX1SA1
SP000296743
IPC26N12NX1SA1-DG
Standard Package
1

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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