Manufacturer Product Number:
IPB60R120P7ATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPB60R120P7ATMA1-DG
Description:
MOSFET N-CH 600V 26A D2PAK
Detailed Description:
N-Channel 600 V 26A (Tc) 95W (Tc) Surface Mount PG-TO263-3
Inventory:
2950 Pcs New Original In Stock
12803530
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IPB60R120P7ATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolMOS™ P7
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
120mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id
4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1544 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
95W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB60R120
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPB60R120P7ATMA1-DG
IPB60R120P7ATMA1TR
2156-IPB60R120P7ATMA1
SP001664922
IPB60R120P7ATMA1DKR
IPB60R120P7
IPB60R120P7ATMA1CT
IFEINFIPB60R120P7ATMA1
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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